Quantum Simulation of Carbon Nanotube and Graphene Nanoribbon Field-Effect Transistors


Today, device simulation is becoming an increasingly important tool to predict the performance and extract relevant parameters of nanoelectronics transistors. However, in recent years, the dimensions of field-effect transistors have become so small that quantum effects inevitably play an increasingly important role. While most commercially available simulation tools are based on classical transport models that are enhanced with quantum mechanical add-ons, the so-called non-equilibrium Green's function method has become one of the premier methods for true quantum mechanical simulation of nanoscale field-effect transistors.

  Scheme of a Quantum Simulation IHT RWTH  

The aim of the present course is the development of a simple tool for the simulation of quantum transport in nanoscale field-effect transistor devices based on a self-consistent solution of the Poisson and Schrödinger equation using non-equilibrium Green's functions. In addition, students will elaborate on a code for the computation of the band structure of carbon nanotubes/graphene nanoribbons using a tight binding calculation. At the end of the course, the simulation tool enables students to study the dependence of the electrical behavior of nanoscale field-effect transistors on their geometry, applied voltages and materials in use.

In contrast to a usual lecture, this course combines theory and practice: after a brief part where novel lecture material and homework assignments are discussed, students will use the remainder of the course time to write their own MATLAB code with one-to-one support and discussions with the instructor. The final examination is a written test where students have to carry out simulation experiments employing their own simulation tool.

Lecture dates and more information at Campus Office.