Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission

Melville, NY / American Inst. of Physics (2017) [Fachzeitschriftenartikel]

Applied physics letters
Volume: 110
Issue: 7
Page(s): 072103

Authors

Selected Authors

Lenz, Markus
Matheisen, C.
Nagel, M.
Knoch, Joachim

Identifier