Person

Dr. rer. nat., Universitätsprofessor

Joachim Knoch

Joachim Knoch
Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik

Address

Building: Walter-Schottky-Haus

Room: 24C205

Sommerfeldstraße 18

52074 Aachen

Contact

workPhone
Phone: +49 241 80 27891
 

Curriculum Vitae

Education

05/1998 - 09/2001

PhD in Physics, RWTH Aachen University, Aachen, Germany

10/1992 - 04/1998

Diploma in Physics, RWTH Aachen University, Aachen, Germany

09/1994 - 04/1995

Associate Student, Queen Mary University of London, London, England

Work Experience

since 5/2011

Full Professor, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany

09/2008 - 04/2011

Associate Professor, Department of Electrical Engineering and Information Technology, TU Dortmund University, Dortmund, Germany

11/2006 - 8/2008

Research Staff Member, IBM Zurich Research Laboratory, Switzerland

01/2003 - 10/2006

Research Associate, Forschungszentrum Jülich, Germany

09/2001 - 12/2002

Postdoctoral Fellow, Massachusetts Institute of Technology, Massachusetts, United States of America

05/1998 - 09/2001

PhD Student, RWTH Aachen University, Aachen, Germany

Awards

2009

IBM Technical Accomplishment

2001 DFG Fellowship for Postdoctoral Research
2001 Borchers-Plakette for excellent PhD work, RWTH Aachen University
1998 Spingorum-Denkmünze, RWTH Aachen University

 

Research Interests

Nanelectronics, Nanoelectromechanical Systems and Photovoltaics

 

Supervised Theses

(1)

Markus Lenz, PhD 2018

(2)

Felix Riederer, PhD 2018

(3)

Tobias Finge, PhD 2017

(4)

Thomas Grap, PhD 2017

(5)

Marcel Müller, PhD 2016

 

Publications

Source Author(s)
[Journal Article]
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
In: Beilstein journal of nanotechnology, 9, 2255-2264, 2018
[DOI: 10.3762/bjnano.9.210]
König, Dirk
Hiller, Daniel
Wilck, Noël
Berghoff, Birger Veit
Müller, Merlin
Thakur, Sangeeta
Di Santo, Giovanni
Petaccia, Luca
Mayer, Joachim
Smith, Sean
Knoch, Joachim
[Journal Article]
Alternatives for doping in nanoscale field-effect transistors
In: Physica status solidi / A, 10.1002/pssa.201700969, 1-16, 2018
[DOI: 10.1002/pssa.201700969]
Riederer, F.
Grap, Thomas
Fischer, S.
Mueller, M. R.
Yamaoka, D.
Sun, B.
Gupta, C.
Kallis, K. T.
Knoch, Joachim
[Journal Article]
Electrostatic Doping of 2D-Materials : From Single Devices Toward Circuitry Exploration
In: Quantum matter, 6 (1), 45-49, 2017
[DOI: 10.1166/qm.2017.1396]
Kallis, K. T.
Müller, M. R.
Knoch, Joachim
Gumprich, A.
Merten, D.
[Contribution to a book, Contribution to a conference proceedings]
Buried multi-gate InAs-nanowire FETs
In: 2017 47th European Solid-State Device Research Conference (ESSDERC) : 11-14 Sept. 2017 / [organizers: IMEC, KU Leuven MICAS ; technical co-sponsorship: IEEE], 2017
[DOI: 10.1109/ESSDERC.2017.8066597]
Grap, Thomas
Riederer, F.
Gupta, C.
Knoch, Joachim
[Contribution to a book, Contribution to a conference proceedings]
A novel approach for scalable sensor arrays using cantilever field-effect transistors
In: 2017 47th European Solid-State Device Research Conference (ESSDERC) : 11-14 Sept. 2017 / [organizers: IMEC, KU Leuven MICAS ; technical co-sponsorship: IEEE], 2017
[DOI: 10.1109/ESSDERC.2017.8066644]
Hessel, Andreas
Scholz, Stefan
Pelger, Alexander
Pfander, Albert
Knoch, Joachim
[Contribution to a book, Journal Article]
Investigations on Field-Effect Transistors Based on Two-Dimensional Materials
In: Annalen der Physik, 529 (11), 1700087, 2017
[DOI: 10.1002/andp.201700087]
Finge, T.
Riederer, F.
Müller, M. R.
Grap, T.
Kallis, K.
Knoch, Joachim
[Contribution to a book, Contribution to a conference proceedings]
The engineering challenges in quantum computing
In: Proceedings of the 2017 Design, Automation & Test in Europe (DATE) : 27-31 March 2017, Swisstech, Lausanne, Switzerland / sponsors: European Design and Automation Association [und 5 weitere] ; technical co-sponsors: IEEE Computer Society Test Technology Technical Council (TTTC), IEEE Solid-State Circuits Society (SSCS), International Federation for Information Processing (IFIP), 2017
[DOI: 10.23919/DATE.2017.7927104]
Almudever, C. G.
Lao, L.
Fu, X.
Khammassi, N.
Ashraf, I.
Iorga, D.
Varsamopoulos, S.
Eichler, C.
Wallraff, A.
Geck, L.
Kruth, A.
Knoch, Joachim
Bluhm, Jörg Hendrik
Bertels, K.
[Journal Article]
Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission
In: Applied physics letters, 110 (7), 072103, 2017
[DOI: 10.1063/1.4976314]
Lenz, Markus
Matheisen, C.
Nagel, M.
Knoch, Joachim
[Journal Article]
Large-area MoS2 deposition via MOVPE
In: Journal of crystal growth, 464, 100-104, 2016
[DOI: 10.1016/j.jcrysgro.2016.11.020]
Marx, Matthias
Nordmann, Sven
Knoch, Joachim
Franzen, Christopher Nikolaus
Stampfer, Christoph
Andrzejewski, D.
Kümmell, T.
Bacher, G.
Heuken, Michael
Kalisch, Holger
Vescan, Andrei
[Contribution to a book]
Transition Metal Dichalcogenide Schottky Barrier Transistors
In: 2D materials for nanoelectronics / edited by Michel Houssa (IMEC, Leuven, Belgium), Athanasios Dimoulas (NCSR-Demokritos, Athens, Greece), Alessandro Molle (CNR IMM, Agrate Brianza, Italy), 2016
[DOI: 10.1201/b19623-11]
Appenzeller, Joerg
Zhang, Feng
Das, Saptarshi
Knoch, Joachim
[Journal Article]
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
In: Nanoscale research letters :NRL, 11 (1), 512, 2016
[DOI: 10.1186/s11671-016-1728-7]
Müller, M. R.
Salazar, R.
Fathipour, S.
Xu, H.
Kallis, K.
Künzelmann, U.
Seabaugh, A.
Appenzeller, J.
Knoch, Joachim
[Contribution to a book, Journal Article]
Nanowire Tunneling Field-Effect Transistors
In: Semiconductors and semimetals, 94, 273-295, 2016
[DOI: 10.1016/bs.semsem.2015.09.005]
Knoch, Joachim
[Journal Article]
A monolithic all-silicon multi-junction solar device for direct water splitting
In: Renewable energy, 94, 90-95, 2016
[DOI: 10.1016/j.renene.2016.03.050]
Nordmann, Sven
Berghoff, Birger
Hessel, Andreas
Wilck, Noel
Osullivan, B.
Debucquoy, M.
John, J.
Starschich, Sergej
Knoch, Joachim
[Journal Article]
Dopant-free complementary metal oxide silicon field effect transistors
In: Physica status solidi / A, 213 (6), 1494–1499, 2016
[DOI: 10.1002/pssa.201532998]
Fischer, Sergej
Kremer, Hauke Ingolf
Berghoff, Birger
Maß, Tobias
Taubner, Thomas
Knoch, Joachim
[Contribution to a book, Contribution to a conference proceedings]
Investigation of dopant segregation induced surface-fields using THz pulse transmission
In: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC 2015) : New Orleans, Louisiana, USA, 14 - 19 June 2015. - 5, 2015
[DOI: 10.1109/PVSC.2015.7356422]
Lenz, Markus
Kianfar, Amir
Nordmann, Sven
Sawallich, Simon
Nagel, Michael
Berghoff, Birger
Knoch, Joachim
[Contribution to a book]
Nanowire FET Simulations Based on the Nonequilibrium Green’s Function Formalism
In: [Encyclopedia of Nanotechnology / Bhushan, Bharat (Editor)], 2015
[DOI: 10.1007/978-94-007-6178-0_100943-1]
Indlekofer, Klaus Michael
Knoch, Joachim
[Journal Article]
Visibility of two-dimensional layered materials on various substrates
In: Journal of applied physics, 118 (14), 145305, 2015
[DOI: 10.1063/1.4930574]
Müller, M. R.
Gumprich, A.
Ecik, E.
Kallis, Klaus T.
Winkler, F.
Kardynal, B.
Petrov, I.
Kunze, U.
Knoch, Joachim
[Contribution to a book, Contribution to a conference proceedings]
Towards a multiscale modeling framework for metal-CNT interfaces
In: 2014 International Workshop on Computational Electronics (IWCE) : [Proceedings], 2014
[DOI: 10.1109/IWCE.2014.6865837]
Claus, M.
Fediai, A.
Mothes, S.
Knoch, Joachim
Ryndyk, D.
Blawid, S.
Cuniberti, G.
Schroter, M.
[Journal Article]
Electrostatic Doping : Controlling the Properties of Carbon-Based FETs With Gates
In: IEEE nanotechnology magazine, 13 (6), 1044-1052, 2014
[DOI: 10.1109/TNANO.2014.2323436]
Knoch, J.
Müller, M. R.
[Contribution to a book, Journal Article]
Buried triple-gate structures for advanced field-effect transistor devices
In: Microelectronic engineering, 119, 95-99, 2014
[DOI: 10.1016/j.mee.2014.02.001]
Müller, M. R.
Gumprich, A.
Schütte, F.
Kallis, K.
Künzelmann, U.
Engels, S.
Stampfer, C.
Wilck, N.
Knoch, J.
[Journal Article]
Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation
In: IEEE journal of photovoltaics, 4 (4), 1025-1031, 2014
[DOI: 10.1109/JPHOTOV.2014.2313982]
Lenz, Markus
Windgassen, Horst
Pletzer, Tobias M.
Knoch, Joachim
[Contribution to a conference proceedings]
Gate-Controlled Doping in Carbon-Based FETs
In: 2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC) : 7-9 Oct. 2013 ; Istanbul, 2013
[DOI: 10.1109/VLSI-SoC.2013.6673269]
Knoch, Joachim
Grap, Thomas
Müller, Marcel
[Journal Article]
Influence of cracks on the local current–voltage parameters of silicon solar cells
In: Progress in photovoltaics, 9 S., 2013
[DOI: 10.1002/pip.2443]
Pletzer, Tobias Markus
van Mölken, Justus Immanuel
Rißland, S.
Breitenstein, Otwin
Knoch, Joachim
[Journal Article]
Optimizing the identification of mono- and bilayer graphene on multilayer substrates
In: Applied optics, 51 (3), 385, 2012
[DOI: 10.1364/AO.51.000385]
Kontis, Christopher
Mueller, Marcel R.
Kuechenmeister, Christian
Kallis, Klaus T.
Knoch, Joachim
[Patent]
Micromechanical pressure sensor and method for producing same, 2012
Knoch, Joachim
Kallis, Klaus
[Patent]
Metal-oxide-semiconductor device including a multiple-layer energy filter, 2012
Bjoerk, Mikael T.
Karg, Siegfried F.
Knoch, Joachim
Riel, Heike E.
Riess, Walter H.
Schmid, Heinz
[Contribution to a conference proceedings]
Characterization of three-dimensional structures in silicon solar cells by spatially-resolved illuminated lock-in thermography
In: 2012 38th IEEE Photovoltaic Specialists Conference (PVSC) : Austin, TX, USA, 3-8 June 2012, 2012
[DOI: 10.1109/PVSC.2012.6317954]
Pletzer, Tobias Markus
Lenz, Markus
Windgassen, Horst
Knoch, Joachim
[Journal Article]
Properties of metal-graphene contacts
In: IEEE nanotechnology magazine, 11 (3), 513-519, 2012
[DOI: 10.1109/TNANO.2011.2178611]
Knoch, Joachim
Zhihong Chen
Appenzeller, J.
[Patent]
Semiconducgor devices with screening coating to inhibit dopant deactivation, 2011
Björk, Mikael
Knoch, Joachim
Riel, Heike
Riess, Walter
Schmid, Heinz
[Patent]
Tunnel Field-Effect Devices, 2011
Bjoerk, Mikael T.
Karg, Siegfried F.
Knoch, Joachim
Reil, Heike E.
Riess, Walter H.
Solomon, Paul M.
[Patent]
Impact Ionization Field-Effect Transistor, 2011
Björk, Mikael
Hayden, O.
Lörtscher, E.
Riel, Heike
Riess, Walter
Schmid, Heinz
Knoch, Joachim
[Journal Article]
Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
In: IEEE electron device letters, 31 (6), 537 - 539, 2010
[DOI: 10.1109/LED.2010.2045220]
Urban, Christoph
Emam, Mostafa
Sandow, Christian
Knoch, Joachim
Zhao, Qing-Tai
Raskin, Jean-Pierre
Mantl, Siegfried
[Journal Article]
Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
In: IEEE electron device letters, 31 (4), 305 - 307, 2010
[DOI: 10.1109/LED.2010.2041180]
Knoch, Joachim
Appenzeller, J.
[Patent]
Nanoelectronic Device, 2010
Bjoerk, Mikael T.
Knoch, Joachim
Riel, Heike E.
Riess, Walter Heinrich
Schmid, Heinz
[Contribution to a book, Contribution to a conference proceedings]
Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI
In: 2009 10th International Conference on Ultimate Integration of Silicon : [Proceedings], 2009
[DOI: 10.1109/ULIS.2009.4897550]
Feste, S. F.
Knoch, Joachim
Habicht, S.
Buca, D.
Zhao, Q. T.
Mantl, S.
[Contribution to a book, Contribution to a conference proceedings]
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
In: 2009 10th International Conference on Ultimate Integration of Silicon : [Proceedings], 2009
[DOI: 10.1109/ULIS.2009.4897541]
Ghoneim, H.
Knoch, Joachim
Riel, H.
Webb, D.
Bjork, M. T.
Karg, S.
Lortscher, E.
Schmid, H.
Riess, W.
[Journal Article]
Impact of variability on the performance of SOI Schottky barrier MOSFETs
In: Solid state electronics, 53 (4), 418 - 423, 2009
[DOI: 10.1016/j.sse.2008.09.019]
Feste, S. F.
Zhang, M.
Knoch, Joachim
Mantl, S.
[Journal Article]
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
In: Applied physics letters, 95 (21), 213504, 2009
[DOI: 10.1063/1.3266526]
Ghoneim, H.
Knoch, Joachim
Riel, H.
Webb, D.
Björk, M. T.
Karg, S.
Lörtscher, E.
Schmid, H.
Riess, W.
[Contribution to a book, Contribution to a conference proceedings]
Optimizing tunnel FET performance - Impact of device structure, transistor dimensions and choice of material
In: 2009 International Symposium on VLSI Technology, Systems, and Applications : [Proceedings], 2009
[DOI: 10.1109/VTSA.2009.5159285]
Knoch, Joachim
[Journal Article]
Silicon nanowire FETs with uniaxial tensile strain
In: Solid state electronics, 53 (12), 1257 - 1262, 2009
[DOI: 10.1016/j.sse.2009.10.013]
Feste, S. F.
Knoch, Joachim
Habicht, S.
Buca, D.
Zhao, Q.-T.
Mantl, S.
[Journal Article]
Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine
In: Nano letters, 9 (1), 173 - 177, 2009
[DOI: 10.1021/nl802739v]
Schmid, Heinz
Björk, Mikael T.
Knoch, Joachim
Karg, Siegfried
Riel, Heike
Riess, Walter
[Journal Article]
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
In: Solid state electronics, 53 (10), 1126 - 1129, 2009
[DOI: 10.1016/j.sse.2009.05.009]
Sandow, C.
Knoch, Joachim
Urban, C.
Zhao, Q.-T.
Mantl, S.
[Journal Article]
Donor deactivation in silicon nanostructures
In: Nature nanotechnology, 4 (2), 103 - 107, 2009
[DOI: 10.1038/NNANO.2008.400]
Björk, Mikael T.
Schmid, Heinz
Knoch, Joachim
Riel, Heike
Riess, Walter
[Patent]
Metal-oxide-semiconductor device including an energy filter, 2009
Bjoerk, Mikael T.
Karg, Siegfried F.
Knoch, Joachim
Riel, Heike E.
Riess, Walter H.
Schmid, Heinz
[Journal Article]
Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures
In: Physical review / B, 77 (12), 125436, 2008
[DOI: 10.1103/PhysRevB.77.125436]
Indlekofer, K. M.
Németh, R.
Knoch, Joachim
[Contribution to a book, Contribution to a conference proceedings]
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
In: 2008 Device Research Conference : [Proceedings], 2008
[DOI: 10.1109/DRC.2008.4800743]
Sandow, C.
Knoch, Joachim
Urban, C.
Mantl, S.
[Contribution to a book, Contribution to a conference proceedings]
One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit
In: 2008 Device Research Conference : [Proceedings], 2008
[DOI: 10.1109/DRC.2008.4800790]
Knoch, Joachim
Bjork, M. T.
Riel, H.
Schmid, H.
Riess, W.
[Journal Article]
Fabrication of uniaxially strained silicon nanowires
In: Thin solid films, 517 (1), 320 - 322, 2008
[DOI: 10.1016/j.tsf.2008.08.141]
Feste, S. F.
Knoch, Joachim
Buca, D.
Mantl, S.
[Journal Article]
Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs
In: IEEE transactions on electron devices, 55 (3), 858 - 865, 2008
[DOI: 10.1109/TED.2007.915054]
Zhang, Min
Knoch, Joachim
Zhang, Shi-Li
Feste, Sebastian
Schröter, Michael
Mantl, Siegfried
[Journal Article]
Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings
In: Journal of applied physics, 104 (4), 044908, 2008
[DOI: 10.1063/1.2968462]
Lanzerath, F.
Buca, D.
Trinkaus, H.
Goryll, M.
Mantl, S.
Knoch, Joachim
Breuer, U.
Skorupa, W.
Ghyselen, B.
[Journal Article]
Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit
In: IEEE electron device letters, 29 (4), 372 - 374, 2008
[DOI: 10.1109/LED.2008.917816]
Knoch, Joachim
Riess, W.
Appenzeller, J.
[Journal Article]
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane
In: Journal of applied physics, 103 (2), 024304, 2008
[DOI: 10.1063/1.2832760]
Schmid, Heinz
Björk, M. T.
Knoch, Joachim
Riel, H.
Riess, W.
Rice, P.
Topuria, T.
[Journal Article]
Tunneling phenomena in carbon nanotube field-effect transistors
In: Physica status solidi / A, 205 (4), 679 - 694, 2008
[DOI: 10.1002/pssa.200723528]
Knoch, Joachim
Appenzeller, Joerg
[Journal Article]
Silicon nanowire tunneling field-effect transistors
In: Applied physics letters, 92 (19), 193504, 2008
[DOI: 10.1063/1.2928227]
Björk, M. T.
Knoch, Joachim
Schmid, Heinz
Riel, H.
Riess, W.
[Journal Article]
Toward Nanowire Electronics
In: IEEE transactions on electron devices, 55 (11), 2827 - 2845, 2008
[DOI: 10.1109/TED.2008.2008011]
Appenzeller, Joerg
Knoch, Joachim
Bjork, Mikael T.
Riel, Heike
Schmid, Heinz
Riess, Walter
[Contribution to a book, Contribution to a conference proceedings]
Semiconductor Nanostructures and Devices
In: Nanoscaled semiconductor-on-insulator structures and devices : [proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices, Big Yalta, Ukraine, 15 - 19 October 2006] / ed. by S. Hall ..., 2007
[DOI: 10.1007/978-1-4020-6380-0_10]
Knoch, Joachim
Lüth, Hans
[Journal Article]
Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs
In: IEEE transactions on electron devices, 54 (6), 1502 - 1509, 2007
[DOI: 10.1109/TED.2007.895235]
Indlekofer, K. M.
Knoch, Joachim
Appenzeller, J.
[Journal Article]
Dopant segregation in SOI Schottky-barrier MOSFETs
In: Microelectronic engineering, 84 (11), 2563 - 2571, 2007
[DOI: 10.1016/j.mee.2007.05.047]
Knoch, Joachim
Zhang, M.
Feste, S.
Mantl, S.
[Journal Article]
Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
In: IEEE electron device letters, 28 (3), 223 - 225, 2007
[DOI: 10.1109/LED.2007.891258]
Zhang, M.
Knoch, Joachim
Appenzeller, Joerg
Mantl, S.
[Journal Article]
1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry
In: IEEE transactions on nanotechnology, 6 (3), 368 - 373, 2007
[DOI: 10.1109/TNANO.2007.892052]
Appenzeller, Joerg
Lin, Yu-Ming
Knoch, Joachim
Chen, Zhihong
Avouris, Phaedon
[Journal Article]
Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors
In: Applied physics / A, 87 (3), 351 - 357, 2007
[DOI: 10.1007/s00339-007-3868-1]
Knoch, Joachim
Zhang, M.
Appenzeller, J.
Mantl, S.
[Journal Article]
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
In: Solid state electronics, 51 (4), 572 - 578, 2007
[DOI: 10.1016/j.sse.2007.02.001]
Knoch, Joachim
Mantl, S.
Appenzeller, J.
[Journal Article]
Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
In: Physical review / B, 74 (11), 113310, 2006
[DOI: 10.1103/PhysRevB.74.113310]
Indlekofer, K. M.
Knoch, Joachim
Appenzeller, J.
[Contribution to a book, Contribution to a conference proceedings]
Tuning of Schottky barrier heights by silicidation induced impurity segregation
In: 2006 International Workshop on Junction Technology : [Proceedings], 2006
[DOI: 10.1109/IWJT.2006.220881]
Zhao, Q. T.
Zhang, M.
Knoch, Joachim
Mantl, S.
[Contribution to a book]
Carbon Nanotube Field-effect Transistors-The Importance of Being Small
In: AmIware : hardware technology drivers of ambient intelligence / edited by Satyen Mukherjee ... [et al.], 2006
[DOI: 10.1007/1-4020-4198-5_18]
Knoch, Joachim
Appenzeller, Joerg
[Journal Article]
Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs
In: Solid state electronics, 50 (4), 594 - 600, 2006
[DOI: 10.1016/j.sse.2006.03.016]
Zhang, M.
Knoch, Joachim
Zhao, Q. T.
Breuer, U.
Mantl, S.
[Contribution to a book, Contribution to a conference proceedings]
Dual-gate silicon nanowire transistors with nickel silicide contacts
In: 2006 International Electron Devices Meeting : [Proceedings], 2006
[DOI: 10.1109/IEDM.2006.346842]
Appenzeller, J.
Knoch, Joachim
Tutuc, E.
Reuter, M.
Guha, S.
[Journal Article]
On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
In: IEEE transactions on electron devices, 53 (7), 1669 - 1674, 2006
[DOI: 10.1109/TED.2006.877262]
Knoch, Joachim
Zhang, Min
Mantl, S.
Appenzeller, J.
[Journal Article]
Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
In: Nano letters, 6 (5), 930 - 936, 2006
[DOI: 10.1021/nl052528d]
Lin, Yu-Ming
Appenzeller, Joerg
Knoch, Joachim
Chen, Zhihong
Avouris, Phaedon
[Journal Article]
Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors
In: Physical review / B, 72 (12), 125308, 2005
[DOI: 10.1103/PhysRevB.72.125308]
Indlekofer, K. M.
Knoch, Joachim
Appenzeller, J.
[Journal Article]
Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
In: Electronics letters, 41 (19), 1085, 2005
[DOI: 10.1049/el:20052665]
Zhang, M.
Knoch, Joachim
Zhao, Q. T.
Fox, A.
Lenk, St.
Mantl, S.
[Journal Article]
Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
In: Solid state electronics, 49 (1), 73 - 76, 2005
[DOI: 10.1016/j.sse.2004.07.002]
Knoch, Joachim
Mantl, S.
Appenzeller, J.
[Journal Article]
Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
In: Applied physics letters, 87 (26), 263505, 2005
[DOI: 10.1063/1.2150581]
Knoch, Joachim
Zhang, M.
Zhao, Q. T.
Lenk, St.
Mantl, S.
Appenzeller, J.
[Contribution to a book, Contribution to a conference proceedings]
A novel concept for field-effect transistors - the tunneling carbon nanotube FET
In: 63rd Device Research Conference Digest, 2005. DRC '05. : [Proceedings], 2005
[DOI: 10.1109/DRC.2005.1553099]
Knoch, Joachim
Appenzeller, J.
[Contribution to a book, Contribution to a conference proceedings]
Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs
In: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 2005
[DOI: 10.1109/ESSDER.2005.1546683]
Zhang, Min
Knoch, Joachim
Zhao, Q. T.
Lenk, St.
Breuer, U.
Mantl, S.
[Journal Article]
Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design
In: IEEE transactions on electron devices, 52 (12), 2568 - 2576, 2005
[DOI: 10.1109/TED.2005.859654]
Appenzeller, J.
Lin, Y.-M.
Knoch, Joachim
Chen, Z.
Avouris, P.
[Journal Article]
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
In: IEEE transactions on nanotechnology, 4 (5), 481 - 489, 2005
[DOI: 10.1109/TNANO.2005.851427]
Lin, Y.-M.
Appenzeller, J.
Knoch, Joachim
Avouris, P.
[Journal Article]
The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
In: Nano letters, 5 (7), 1497 - 1502, 2005
[DOI: 10.1021/nl0508624]
Chen, Zhihong
Appenzeller, Joerg
Knoch, Joachim
Lin, Yu-ming
Avouris, Phaedon
[Patent]
Method of fabricating a tunneling nanotube field effect transistor, 2005
Knoch, Joachim
Appenzeller, Jörg
[Contribution to a book, Contribution to a conference proceedings]
An extended model for carbon nanotube field-effect transistors
In: Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. : [Proceedings], 2004
[DOI: 10.1109/DRC.2004.1367821]
Knoch, Joachim
Mantl, S.
Lh, Y.-M.
Chen, Z.
Avouris, Ph.
Appenzeller, J.
[Journal Article]
Multimode Transport in Schottky-Barrier Carbon-Nanotube Field-Effect Transistors
In: Physical review letters, 92 (22), 226802, 2004
[DOI: 10.1103/PhysRevLett.92.226802]
Appenzeller, J.
Knoch, Joachim
Radosavljević, M.
Avouris, Ph.
[Journal Article]
High performance of potassium n-doped carbon nanotube field-effect transistors
In: Applied physics letters, 84 (18), 3693 - 3695, 2004
[DOI: 10.1063/1.1737062]
Radosavljević, M.
Appenzeller, J.
Avouris, Ph.
Knoch, Joachim
[Journal Article]
Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors
In: Physical review letters, 92 (4), 048301, 2004
[DOI: 10.1103/PhysRevLett.92.048301]
Appenzeller, J.
Radosavljević, M.
Knoch, Joachim
Avouris, Ph.
[Journal Article]
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
In: Physical review letters, 93 (19), 196805, 2004
[DOI: 10.1103/PhysRevLett.93.196805]
Appenzeller, J.
Lin, Y.-M.
Knoch, Joachim
Avouris, Ph.
[Contribution to a book, Contribution to a conference proceedings]
Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device
In: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) : [Proceedings], 2003
[DOI: 10.1109/DRC.2003.1226919]
Appenzeller, J.
Knoch, Joachim
Avouris, P.
[Journal Article]
Sub-40 nm SOI V-groove n-MOSFETs
In: IEEE electron device letters, 23 (2), 100 - 102, 2002
[DOI: 10.1109/55.981319]
Appenzeller, J.
Martel, R.
Avouris, Ph.
Knoch, Joachim
Scholvin, J.
del Alamo, J. A.
Rice, P.
Solomon, P.
[Contribution to a book, Contribution to a conference proceedings]
Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors
In: Digest. International Electron Devices Meeting, : [Proceedings], 2002
[DOI: 10.1109/IEDM.2002.1175834]
Appenzeller, J.
Knoch, Joachim
Martel, R.
Derycke, V.
Wind, S.
Avouris, P.
[Journal Article]
Carbon nanotube electronics
In: IEEE transactions on nanotechnology, 1 (4), 184 - 189, 2002
[DOI: 10.1109/TNANO.2002.807390]
Appenzeller, J.
Knoch, Joachim
Martel, R.
Derycke, V.
Wind, S. J.
Avouris, P.
[Journal Article]
Field-Modulated Carrier Transport in Carbon Nanotube Transistors
In: Physical review letters, 89 (12), 126801, 2002
[DOI: 10.1103/PhysRevLett.89.126801]
Appenzeller, J.
Knoch, Joachim
Derycke, V.
Martel, R.
Wind, S.
Avouris, Ph.
[Journal Article]
Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors
In: Applied physics letters, 81 (16), 3082-3084, 2002
[DOI: 10.1063/1.1513657]
Knoch, Joachim
Appenzeller, Jörg
[Journal Article]
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
In: Applied physics letters, 77 (2), 298-300, 2000
[DOI: 10.1063/1.126956]
Appenzeller, Jörg
Martel, R.
Solomon, P.
Chan, K.
Avouris, P.
Knoch, Joachim
Benedict, J.
Tanner, M.
Thomas, S.
Wang, K. L.
del Alamo, J. A.