Person

Dr. rer. nat.

Karl Wolter

Karl Wolter
Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik

Address

Building: Walter-Schottky-Haus

Room: 24C204

Sommerfeldstraße 18

52074 Aachen

Contact

workPhone
Phone: +49 241 80 27797
Fax: +49 241 80 22246
 

Publications

Source Author(s)
[Contribution to a book, Contribution to a conference proceedings]
Evaluation and investigation of laser doping by a double-gaussian shaped beam profile
In: 2013 IEEE 39th Photovoltaic Specialists Conference : (PVSC 2013) ; Tampa, Florida, USA, 16 - 21 June 2013, 2013
[DOI: 10.1109/PVSC.2013.6744928]
Safiei, Ali
Wolter, Karl
Nagel, Michael
Windgassen, Horst
Kurz, Heinrich
[Contribution to a conference proceedings, Journal Article]
SiliconPV 2012 generation of defect-related acceptor states by laser doping
In: Solar energy materials & solar cells, 106 (SI), 2-6, 2012
[DOI: 10.1016/j.solmat.2012.06.045]
Safiei, Ali
Derix, Robert
Suckow, Stephan
Koch, Holger
Breuer, Uwe
Pletzer, Tobias Markus
Wolter, Karl
Kurz, Heinrich
[Contribution to a conference proceedings]
Emitter Profile Tailoring to Contact Homogeneous High Sheet Resistance Emitter
In: Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012 / Edited by J. Poortmans, S. Glunz, A. Aberle, R. Brendel, A. Cuevas, G. Hahn, R. Sinton and A. Weeber, 2012
[DOI: 10.1016/j.egypro.2012.07.089]
Safiei, Ali
Windgassen, Horst
Wolter, Karl
Kurz, Heinrich
[Journal Article]
Intraband coherence of Bloch oscillations after momentum scattering
In: Applied physics / A, Materials science & processing, 78 (4), 491-495, 2004
[DOI: 10.1007/s00339-003-2409-9]
Nüsse, S.
Wolter, F.
Haring Bolívar, Peter
Köhler, K.
Hey, R.
Grahn, H. T.
Kurz, Heinrich
[Contribution to a conference proceedings, Journal Article]
Temperature resolved photoluminescence investigations on ingaas/inp mqws
In: Journal of crystal growth, 107 (1/4), 531-536, 2002
[DOI: 10.1016/0022-0248(91)90516-8]
Schwedler, R.
Reinhardt, F.
Grützmacher, Detlev
Wolter, Karl
[Contribution to a conference proceedings, Journal Article]
Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
In: Journal of crystal growth, 107 (1/4), 543-548, 2002
[DOI: 10.1016/0022-0248(91)90518-A]
Camassel, J.
Laurenti, J. P.
Juillaguet, S.
Reinhardt, F.
Wolter, Karl
Kurz, Heinrich
Grützmacher, Detlev
[Journal Article]
Influence of carrier-carrier scattering on intraband dephasing
In: Superlattices and microstructures, 26 (2), 93-102, 1999
[DOI: 10.1006/spmi.1999.0763]
Wolter, F.
Martini, R.
Tolk, S.
Haring Bolívar, Peter
Kurz, Heinrich
Hey, R.
Grahn, H. T.
[Journal Article]
Influence of LO-photon emission on Bloch oscillations in semiconductor supperlattices
In: Physica status solidi / B, Basic solid state physics, 204 (1), 83-86, 1997
[DOI: 10.1002/1521-3951(199711)204:1<83::AID-PSSB83>3.0.CO;2-B]
Wolter, F.
Roskos, H. G.
Haring Bolívar, Peter
Bartels, G.
Kurz, Heinrich
Köhler, K.
Grahn, H. T.
Hey, R.
[Journal Article]
Coulomb-renormalized intraband dynamics probed by THz emission
In: Physica status solidi / B, Basic solid state physics, 204 (1), 31-34, 1997
[DOI: 10.1002/1521-3951(199711)204:1<31::AID-PSSB31>3.0.CO;2-X]
Wolter, F.
Haring Bolívar, Peter
Bartels, G.
Roskos, H. G.
Kurz, Heinrich
Axt, A. M.
Köhler, K.
[Journal Article]
Excitonic emission of THz radiation : experimental evidence of the shortcomings of the Bloch equation method
In: Physical review letters : PRL, 78 (11), 2232-2235, 1997
[DOI: 10.1103/PhysRevLett.78.2232]
Haring Bolívar, Peter
Wolter, F.
Müller, A.
Roskos, H. G.
Kurz, Heinrich
Köhler, K.
[Journal Article]
Radiative decay of optically excited coherent plasmons in a two-dimensional electron gas
In: Journal of the Optical Society of America : JOSA / B, Optical physics, 13 (5), 1045-1053, 1996
[DOI: 10.1364/JOSAB.13.001045]
Vossebürger, M. V.
Roskos, H. G.
Wolter, F.
Waschke, C.
Kurz, Heinrich
Hirakawa, K.
Wilke, I.
Yamanaka, K.
[Contribution to a conference proceedings, Journal Article]
Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGaAs/GaAs heterojunctions
In: Surface science, 361/362, 368-371, 1996
[DOI: 10.1016/0039-6028(96)00423-2]
Hirakawa, K.
Wilke, I.
Yamanaka, K.
Roskos, H. G.
Vossebürger, M.
Wolter, F.
Waschke, C.
Kurz, Heinrich
Grayson, M.
Tsui, D. C.
[Journal Article]
Electronic-transitions at si(111)/sio2 and si(111)/si3n4 interfaces studied by optical 2nd-harmonic spectroscopy
In: Physical review letters : PRL, 74 (15), 3001-3004, 1995
[DOI: 10.1103/PhysRevLett.74.3001]
Meyer, C.
Lüpke, G.
Emmerichs, U.
Wolter, F.
Kurz, Heinrich
Bjorkman, c. H.
Lucovsky, G.
[Contribution to a conference proceedings, Journal Article]
Optical second harmonic generation : A probe of atomic structure and bonding at Si–SiO2 interfaces, and other chemically modified Si surfaces
In: Journal of vacuum science & technology : JVST / B, 12 (4), 2484-2492, 1994
[DOI: 10.1116/1.587789]
Emmerichs, U.
Meyer, C.
Bakker, H. J.
Wolter, F.
Kurz, Heinrich
Lucovsky, G.
Bjorkman, C. E.
Yasuda, T.
Ma, Y.
Jing, Z.
Whitten, J. L.
[Journal Article]
Influence of Si-o bonding arrangements at kinks on second-harmonic generation from vicinal Si(111) surfaces
In: Physical review / B, Condensed matter and materials physics, 50 (23), 17292-17297, 1994
[DOI: 10.1103/PhysRevB.50.17292]
Lüpke, G.
Meyer, C.
Emmerichs, U.
Wolter, F.
Kurz, Heinrich
[Contribution to a conference proceedings]
Optical properties of shallow In1-xGaxAs/In1-yGayAs superlattices for opto-electronic applications
In: Proc. 5. Int. Conf. on Indium Phosphide and Related Mater. 1993, 1993
Schwedler, R.
Brüggemann, F.
Wolter, K.
Jaekel, C.
Kersting, R.
Kohl, A.
Leo, K.
Kurz, H.
[Contribution to a conference proceedings]
Observation of type-I and type II Wannier-stark-effect in InGaAs/InGaAs superlattices
In: Journal de physique / 4, Proceedings. - 5,3, 1993
Schwedler, R.
Brüggemann, F.
Opitz, B.
Kohl, A.
Wolter, K.
Leo, K.
Kurz, H.
[Journal Article]
Type-I and type-II Wannier-stark-effect in InGaAs/InGaAs superlattices
In: Applied physics / A, Materials science & processing, 57 (2), 199-201, 1993
[DOI: 10.1007/BF00331445]
Schwedler, R.
Brüggemann, F.
Kohl, A.
Wolter, K.
Leo, K.
Kurz, H.
[Contribution to a conference proceedings]
Observation of type-I and type-II Wannier-stark-effect in GaAs/InGaAs superlattices
In: Journal de physique / 4, Proceedings. - 5,3, suppl., 1993
Schwedler, R.
Brüggemann, F.
Opitz, B.
Kohl, A.
Wolter, K.
Leo, K.
Kurz, H.
[Contribution to a conference proceedings]
Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses
In: Third International Conference on Optics of Excitons in Confined Systems : Montpellier (France), August 30th - September 2nd, 1993 / ed. by: G. Bastard ..., 1993
[DOI: 10.1051/jp4:1993518]
Camassel, J.
Juillaguet, S.
Schwedler, R.
Wolter, Karl
Baumann, F. H.
Leo, K.
Laurenti, J. P.
[Contribution to a conference proceedings, Journal Article]
Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy
In: Materials science & engineering / B, Solid state materials for advanced technology, 20 (1/2), 66-68, 1993
[DOI: 10.1016/0921-5107(93)90398-7]
Schwedler, R.
Gallmann, B.
Wolter, K.
Kohl, A.
Leo, Karl
Kurz, Heinrich
Baumann, F. H.
[Contribution to a conference proceedings, Journal Article]
Evidence for nonuniform interface thickness in strained ingaas/inp quantum-wells
In: Materials science & engineering / B, Solid state materials for advanced technology, 20 (1/2), 62-65, 1993
[DOI: 10.1016/0921-5107(93)90397-6]
Camassel, J.
Wolter, Karl
Juillaguet, S.
Schwedler, R.
Massone, E.
Gallmann, B.
Laurenti, J. P.
[Contribution to a conference proceedings, Journal Article]
Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices
In: Materials science & engineering / B, Solid state materials for advanced technology, 21 (2/3), 244-248, 1993
[DOI: 10.1016/0921-5107(93)90358-T]
Kohl, A.
Juillaguet, S.
Fraisse, B.
Schwedler, R.
Royo, F.
Peyre, H.
Bruggeman, F.
Wolter, Karl
Leo, K.
Kurz, Heinrich
Camassel, J.
[Contribution to a book]
Quantitative approach of non-stoichiometric interfaces following a growth interruption sequence: Application to lattice-matched InGaAs/InP quantum wells
In: Non-stoichiometry in semiconductors, 1992
Juillaguet, S.
Laurenti, J. P.
Schwedler, R.
Wolter, K.
Camassel, J.
Kurz, H.
[Contribution to a conference proceedings]
InGaAs/InP multiple quantum well modulators in experiment and theory
In: Topical Meet. Dig. Ser. 1992, 1992
Schwedler, R.
Mikkelsen, H.
Leo, K.
Wolter, K.
Laschet, D.
Hergeth, J.
Kurz, H.
[Journal Article]
Dynamics of carrier transport and capture in InGaAs/InP heterostructures
In: Physical review / B, Condensed matter and materials physics, 46, 1639, 1992
Kersting, R.
Schwedler, R.
Wolter, K.
Leo, K.
Kurz, H.
[Journal Article]
Electro-optic characterization of InGaAs/InP MQW p-i-n modulator structures
In: Microelectronic engineering, 19 (1/4), 895-898, 1992
[DOI: 10.1016/0167-9317(92)90567-B]
Schwedler, R.
Mikkelsen, H.
Kersting, R.
Laschet, D.
Kohl, A.
Wolter, K.
Leo, K.
Kurz, H.
[Journal Article]
Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
In: Applied surface science, 63, 187, 1992
Schwedler, R.
Gallmann, B.
Wolter, K.
Kohl, A.
Leo, K.
Kurz, H.
Juillaguet, S.
Massone, E.
Laurenti, J. P.
Baumann, F. H.
[Journal Article]
Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE
In: Microelectronic engineering, 19, 891-894, 1992
Schwedler, R.
Gallmann, B.
Wolter, K.
Kohl, A.
Leo, K.
Kurz, H.
Juillaguet, S.
Camassel, J.
Laurenti, J. P.
Baumann, F. H.
[Journal Article]
Optical characterization of strained InGaAs/InP quantum well structures
In: Microelectronic engineering, 15, 593-596, 1991
Wolter, K.
Schwedler, R.
Gallmann, B.
Jaeckel, C.
Stollenwerk, M.
Camassel, J.
Laurenti, J. P.
Juillaguet, S.
[Contribution to a conference proceedings, Journal Article]
Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions
In: Journal of electronic materials, 20 (1), 79-90, 1991
[DOI: 10.1007/BF02651969]
Camassel, J.
Laurenti, J. P.
Juillaguet, S.
Wolter, Karl
Deschler, M.
Ambross, S.
Grüter, K.
[Journal Article]
Mode of growth in LP-MOVPE deposition of GaInAs/InP quantum wells
In: Journal of electronic materials, 19, 471-479, 1990
[DOI: 10.1007/BF02658008]
Grützmacher, D.
Hergeth, J.
Reinhardt, F.
Wolter, K.
Balk, P.
[Journal Article]
Subpicosecond luninescence study of carrier transfer in InGaAs/InP multiple quantum wells
In: Superlattices and microstructures, 7, 345-348, 1990
Kersting, R.
Zhou, X. Q.
Wolter, K.
Grützmacher, D.
Kurz, H.
[Journal Article]
Indium-doped GaAs: Investigation of deep traps
In: Physical review / B, Condensed matter and materials physics, 39, 5934-5946, 1989
Laurenti, J. P.
Wolter, K.
Roentgen, P.
Seibert, K.
Kurz, H.
Camassel, J.
[Journal Article]
Process dependent interface states of Ag/(110) GaAs Schottky-diodes
In: Materials science forum, 38/41, 1409-1414, 1989
Schnitzler, H. J.
Platen, W.
Kohl, D.
Wolter, K.
[Contribution to a book]
GaInAs/InP multi-quantum well-structures for lasers by LP-MOVPE
In: Institute of Physics conference series. - 91,chapter 7, 1988
Grützmacher, D.
Wolter, K.
Zachau, M.
Jürgensen, H.
Kurz, H.
Balk, P.
[Journal Article]
Indium-doped GaAs: A very dilute alloy system
In: Physical review / B, Condensed matter and materials physics, 37, 4155, 1988
Laurenti, J. P.
Roentgen, P.
Wolter, K.
Seibert, K.
Kurz, H.
[Journal Article]
Quantitative analysis of carbon concentration in MOMBE-p-GaAs by low temperature photoluminescence
In: Journal of applied physics, 64, 5098-5098, 1988
Ambros, Stefan
Kamp, M.
Wolter, K.
Weyers, M.
Heinecke, H.
Kurz, Heinrich
Balk, P.
[Journal Article]
Interface states of Ag/(100)GaAs Schottky diodes without and with interfacial layers
In: Journal of applied physics, 64, 218-218, 1988
Platen, W.
Schmutzler, H.-J.
Kohl, D.
Brauchle, K.-A.
Wolter, K.
[Journal Article]
DLTS investigation of UHV prepared n-GaAs (110)-Au Schottky-diodes
In: Surface science, 178, 164-164, 1987
Platen, Wolfgang
Kohl, D.
Brauchle, K. A.
Wolter, K.